product summary part number bv dss r ds(on) i d IRFY130CM 100v 0.18 w 14.4a provisional data sheet no. pd 9.1286c hexfet ? power mosfet hexfet technology is the key to international rectifiers advanced line of power mosfet transistors. the effi- cient geometry design achieves very low on-state re- sistance combined with high transconductance. hexfet transistors also feature all of the well-estab- lished advantages of mosfets, such as voltage con- trol, very fast switching, ease of paralleling and electri- cal parameter temperature stability. they are well-suited for applications such as switching power supplies, mo- tor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistors totally isolated package elimi- nates the need for additional isolating material between the device and the heatsink. this improves thermal effi- ciency and reduces drain capacitance. IRFY130CM features n hermetically sealed n electrically isolated n simple drive requirements n ease of paralleling n ceramic eyelets n-channel 100 volt, 0.18 w hexfet absolute maximum ratings parameter IRFY130CM units i d @ v gs =10v, t c = 25c continuous drain current 14.4 i d @ v gs =10v, t c = 100c continuous drain current 9.1 a i dm pulsed drain current ? 57.6 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalance energy ? 69 mj i ar avalance current ? 14.4 a e ar repetitive avalanche energy ? 7.5 mj dv/dt peak diode recover y dv/dt ? 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.063 in (1.6mm) from case for 10 sec) weight 4.3(typical) g *i d current limited by pin diameter
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.1 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.18 v gs = 10v, i d = 9.1a ? on-state resistance 0.21 w v gs = 10v, i d = 14.4a ? v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250a g fs forward tr ansconductance 3.0 s ( )v ds 3 15v, i ds = 9.1a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max. rating,v gs = 0v 250 v ds = 0.8 x max. rating v gs = 0v, t j = 25c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 12.8 28.5 v gs = 10v, i d = 14.4a q gs gate-to-source charge 1.0 6.3 v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 3.8 16.6 see figures 6 and 13 t d(on) turn-on delay time 30 v dd = 50v, i d =14.4a, r g =7.5 w tr rise time 75 v gs = 10v t d(off) turn-off delay time 40 t f fall time 45 see figure 10 l d internal drain inductance 8.7 l s internal source inductance 8.7 c iss input capacitance 650 v gs = 0v, v ds = 25v c oss output capacitance 240 pf f = 1.0mhz. (figure 5) c rss reverse tr ansfer capacitance 44 thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.67 r thja junction-to-ambient 80 k/w ? typical socket mount r thcs case-to-sink 0.21 mounting surface flat, smooth w a nc nh ns measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 14.4 i sm pulse source current (body diode) ? 57.6 v sd diode forw ard v oltage 1.5 v t j = 25c, i s = 14.4a, v gs = 0v ? t rr reverse recovery time 300 ns t j = 25c, i f = 14.4a, di/dt 100 a/ m s q rr reverse recovery charge 3.0 c v dd 50 v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . IRFY130CM device modified mosfet symbol showing the integral reverse p-n junction rectifier. a
fig. 5 typical capacitance vs. drain-to-source voltage fig. 6 typical gate charge vs. gate-to-source voltage fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics t c = 25c IRFY130CM device fig. 2 typical output characteristics t c = 150c
fig. 10a switching time test circuit fig. 10b switc hing time waveforms fig. 9 maximum drain current vs. case temperature fig. 7 t ypical source-to-drain diode forward voltage fig. 8 maximum safe operating area IRFY130CM device 1 10 100 1000 1 10 100 1000 v , drain-to-source voltage (v) ds i , d rain c urrent (a) operation in this area limited b y r d ds(on) t = 25c t = 150c single pulse c j 100s 1ms 10ms a 3 0 c 0 3 6 9 12 15 25 50 75 100 125 150 c i , d rain c urrent (a m ps) d t , c ase temperature (c ) a
fig. 11 maximum effective transient thermal impedance, junction-to-case vs. pulse duration fig. 12c max. avalanche energy vs. current t p v (br)dss i as fig. 12a unclamped inductive test circuit fig. 12b unclamped inductive waveforms r g i as 0.01 w t p d.u.t l v ds + - v dd driver a fig. 13a gate charge t est cir cuit IRFY130CM device 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thj c d = 0.50 0.01 0.02 0.05 0.10 0.20 sing le pul se (the rmal respo ns e) a therm al response (z ) 0 20 40 60 80 25 50 75 100 125 150 175 j e , s ingle pulse a valanche energy (mj) as a s tarting t , junction temperature (c ) v = 2 5v i = 2 5 a dd d 3 0 c
fig. 13b basic gate charge waveform case outline and dimensions to-257aa notes: 1. dimensioning and tolerancing per ansi y14.5m-1982 2. controlling dimension: inch 3. dimensions are shown in millimeters (inches) 4. outline conforms to jedec outline to-257aa pin 1 - drain pin 2 - source pin 3 - gate 1 2 3 to-257aa non-standard pin configuration pin 1 - gate pin 2 - drain pin 3 - source order part type irfy130c caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44(0) 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 6/96 IRFY130CM device ? repetitive rating; pulse width limited by maximum junc- tion temperature (see figure 11). ? @ v dd = 50v, star ting t j = 25c, e as = [0.5 * l * ( ) * [bv dss /(bv dss -v dd )] peak i l = 14.4a, v gs = 10v, 25 r g 200 w (figure 12) ? i sd 14.4a, di/dt 140a/s, v dd bv dss , t j 150c ? pulse width 300 s; duty cycle 2% ? k/w = c/w w/k = w/c notes:
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